THERMAL
Annealing is a heat treatment wherein, a material is altered, causing a change in its properties such as strength or hardness. It is a process that produces conditions by heating, and maintaining a suitable temperature, and then cooling. Annealing is used to induce softness, relieve internal stress, and to refine the structure.
THERMAL EQUIPMENT
Tub Furnace Carb
RTA
HOT-Plates Robotechnik
TZF CARBOLATE TUBE FURNACE
Carbolate tube furnace is a heating device that meets the requirements of precise control and temperature uniformity as annealing of samples with PECVD oxide, annealing of samples with metallic contacts, thermal oxidation of silicon and diffusion of dopants. These tubes are used as sample holders and avoid cross contamination. Four gases are available: Forming Gas (4% H2 + 96% N2), Argon, Nitrogen and Oxygen. The oven has a double temperature thermocouple system and a ramp system with maximum temperature of 1200°C.
Max temperature:
1200ºC
Available gases:
Forming Gas
Argon
Nitrogen
Oxygen
Facilities:
Clean and dry compressed air
Refrigerant Water (18 – 22 °C)
N2 purity 99.99%
AIIWin21 AccuThermo AW410 Rapid Thermal Process System
The AccuThermo AW41 O is a rapid thermal processing (RTP) system, which uses high intensity visible radiation to heat single wafers for short process periods of time at precisely controlled temperatures in a controlled atmosphere. The process periods are typically 1-600 seconds in duration.
These capabilities, combined with the heating chamber’s cold-wall design and superior heating uniformity, provide significant advantages over conventional furnace processing.
Wafer handling:
Manual loading, single wafer processing
Wafer sizes:
2″ 3″ 4″ 5″ and 6” wafers
Ramp up rate:
Programmable, l0°C to 200°C per second
Ramp down rate:
Programmable, l0°C to 250°C per second. Ramp down rate is temperature-and-radiation-dependent and the maximum is 125°C per second
Recommended steady state temperature range:
150°C – 1150°C
ERP temperature accuracy:
±1°C, when calibrated against an instrumented thermocouple wafer (ITC}
Thermocouple temperature accuracy:
0.5°C
Temperature repeatability:
±0.5°C or better at 1150 °C wafer-to-wafer
Temperature uniformity:
+5°C across a 611 (150 mm) wafer at 1150ºC
HOT-Plates RobotechnikAVAILABLE SOON
The robotechnik Optihot HT24 is a stand-alone system for typical lithography baking applications. It has 4 hotplates which can be adjusted individually up to 250ºC adjustable in 1°C steps. Different size of wafers can be processed, up to 8” wafers.