FILM STRESS MEASUREMENT
EQUIPMENT
FLX 2320-S Thin film stress measurement system
The tool is equipped with two lasers of different wavelengths (670 and 785 nm) to help address potential issues with destructive interference at the detector, heat stage with 500°C max and 30°C/minute max heat up ramp rate.
It calculates film stress by measuring the change in radius of curvature of a substrate caused by the deposition of a thin film on the substrate. This requires measurement of the original substrate radius of curvature (first scan) followed by a second (single) scan to measure curvature with the film of interest deposited on the front of the substrate. The tool is equipped with a hot chuck to study temperature and annealing effects on film.
Stage:
8″
Temperature range:
From room temperature to 500°C
Measurements range:
1 to 4000 mPa
