DRY ETCHING
Reactive ion etching (RIE) is a high resolution mechanism for etching materials using reactive gas discharges. It is a highly controllable process that can process a wide variety of materials, including semiconductors, dielectrics and some metals. One major advantage to RIE over other forms of etching is that the process can be designed to be highly anisotropic, allowing for much finer resolution and higher aspect ratios.
DRY ETCHING EQUIPMENT
Dry Etching ICP-STS
Dry Etching CORIAL
Plasma O2-TEPLA
Plasma O2-Diener
STS Multiplex ICP AOE System
The STS AOE (Advanced Oxide Etching) is an RIE ICP plasma etcher with 2 standards 13.56Mhz RF generators (ICP + plate) and fluorinated gases (SF6-CF4-C4F8) which allow to etch typical semiconductors materials like Si, SiO2 and SiN anisotropically with high selectivity with standard resists or metal masks.
Wafer size:
6“/150mm
MFC gas lines:
SF6 C4F8 CF4 H2 He Ar 02
Process temperature:
-40ºC 90ºC
Vaccum load rock:
Manual Loading
Chuck:
ESC clamping
Etch materials:
Si, SiO2,SiN
ICP/RF generator:
2000W/1000W
Corial 210IL – 200 mm INDUCTIVELY COUPLED SYSTEM
The CORIAL etching systems are designed for high resolution etching of any etchable material (material that can be combined with F, Cl, C and H atoms to form volatiles compounds). The anisotropy, selectivity and uniformity required for manufacturing of integrated circuits and LEDs, OLEDS devices with critical micronic and submicronic dimensions on materials as Si, SiO2, Si3N4, polymers, III-V and II- VI compounds, sapphire and metals.
Wafer size:
4”,6”,8”
MFC gas lines:
SF6 C4F8 CH F3 Cl.2 A.r 02
Process temperature:
-30°C 150°C
Vaccum load rock:
Manual Loading
EPD camera system:
Laser interferometer 670nm
3 liners configuration:
Si, SiO2,SiN/metaIs/III-V materials
ICP/RF generator:
2000W/1000W
TEPLA PLASMA SYSTEM 200
The Tepla PV200 is a table-top plasma asher with O2 and N2 gases with a 400W 2.4Ghz generator mainly used for the stripping of the resists after the etching steps, curing the HSQ resist but also for cleaning and surface preparation of the wafers prior to resist coating. All kind of samples or substrates sizes (up to 8”) can be processed in this tool.
PLASMA CHAMBER
Material:
Quartz, lnner0 245 mm
Depth:
240 mm (vertical arrangement)
Chamber lid:
Aluminum, Quartz-view port with 100 mm and Plexiglas
Window against UV-radiation
Chamber seals:
O-rings, Silicone rubber
Gas inlet in chamber lid
HIGH FREQUENCY GENERATOR
Power:
100-400 Watts, continuously variable
Frequency:
2.45 GHz
HF-generator:
Magnetron, air cooled
DIENER NANO Plasma Surface Technolgy
The Diener Nano is table-top plasma surface treatment machine with a low-frequency generator (100khz) with O2 and N2 gases. It is mainly used for surface treatment on sample or wafers prior to resist coating. It is also possible to generate H2O vapor plasma for different applications.
Wafer size:
up to 8”
MFC gas lines:
O2
Generator:
low frequency 100khz
Applications:
surface activation, resist stripping
