DEPOSITION

Deposition or Growth refers to the controlled synthesis, growth, or transfer of materials as thin films on a substrate. A thin film is a layer of material ranging from fractions of a nanometer (monolayer) to several micrometers in thickness. Based on the growth dynamics which prevail during the deposition, the resulting material can be amorphous, polycrystalline, or crystalline.

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Deposition Equipment

CENTURA​

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CORIAL D250L​

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Black Magic (Aixtron)​

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SPUTTER-RF (Kenosistec)

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SPUTTER-Emi K675X

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EVAPO-Pfeiff​

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CENTURA 5200 Applied Materials DxZ Silane PECVD 6″

Centura 5200 with DxZ chambers is plasma-enhanced  chemical vapor deposition system  used to deposit SiO2, SiN, SiON and a-Si:H thin films from a gas state (vapor) to a solid state on a substrate. Chemical reactions are involved in the process, which occur after creation of a plasma of the reacting gases. The plasma is generally created by radio frequency (RF) (alternating current (AC)) frequency or direct current (DC) discharge between two electrodes, the space between which is filled with the reacting gases.

MateriaIs:

SiO2, SiNx, SION y a – Si: H

Temperature range:

200 – 420°C

Loadleck system:

Automatics

Heaters:

Ceramics

Source:

Gaseous precursors

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PECVD 8” CORIAL 250L System

Corial D250L PECVD system achieves rapid and uniform deposition for a wide range of materials including SiO2, Si3N4, SiOCH, SiOF, SiC and aSi-H films, on wafers up to 200 mm diameter. Optimizing film stress control is simple to accomplish thanks to the reactor’s symmetrical design. COSMA Pulse software enables pulsing of any recipe parameter. The pulsing feature enlarges the process window to achieve better control of film properties.

Substrates:

PECVD system with vacuum load-lock for 200 mm wfs

Temperature range:

320°C

Modes:

300 W 13.56 MHz Automatic laser end point detector

Heaters / cleaning:

lsothermal reactor placed inside a vacuum Vessell and 11n-situ plasma cleaning.

 Gas Sources:

MFC:s are 1000 sccm Ar, 1000 sccm N2, 2000   sCcm N2Q, 500 sccm NH3, 100 sccm C2H4, 100   sccm SiH4 (non diluted) and 200 sccm SF6.

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BLACK MAGIC AIXTRON PRO PECVD 6″ System

PECVD-Graphene the Aixtron Black Magic is dedicated to graphene synthesis and can accommodate multiple pieces or a single 6″ wafer, with methane and hydrogen available as process gases. The system used for this process is the cold wall.  Process recipes have been optimized and are available to the user for the following: Cu foil, Cu-evaporated substrates, Ni substrates and sapphire.

Substrate:

Cu, Ni, Si02, e-Si, Al2 0 3

Temperature range:

22 -1300°C

Modes:

Thermal CVD and plasma-enhanced   CVD

Heaters:

Graphite

Source:

Gaseous precursors

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RF SPUTTER SYSTEM

Kenosistec’s KS 500 C is a sputtering system equipped with RF, DC and DC-pulsed generators for sputtering any kind of material adjusting its physical properties both directly from source materials and by reactive sputtering. The tool can be used with substrates up to 200 mm diameter with control of the substrate temperature up to 400ºC.

Magnetron Cathode System:

4× non-magnetic (Kenosistec)

Water-cooled (direct)

4″ targets

Individual shutters

Adjustable angle & distance

RF Sputter System

DC Power Supply: 2000 W

Pulsed DC Power Supply: 1000 W

RF Power Supplies (x2): 750 W each

RF for cleaning/bias: 600 W

Additional capabilities:

    • Substrate rotation up to 400 °C
    • Simultaneous bias during rotation

ICP Chamber: 

RF Power: 3000 W

Frequency: 13.56 MHz (quartz)

Gases: Ar, N₂, O₂ (MFC x3)

    Target Configuration:

    Number of targets: 4

    Process Capabilities: 

    Operation modes: DC, RF, and pulsed DC

    Cooling: Integrated in cathodes

    Uniformity: Adjustable confocal configuration

    Substrate compatibility: Multiple sizes with adjustable geometry

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    Emitech Chromium Sputter K675X

    Emitech K675X is a DC magnetron sputtering system for conductive material deposition. Turbo pump and Peltier cooled sputtering provide fine grain metal deposition. Available materials include Cr, Ti, Al, Ti/W and ITO..

    Work Chamber:

    Borosilicate Glass 300mm Día. x 200mm H

    Sputter targets:

    54mm Día. x 0.3mm
    Thick Chromium fitted as standard

    Fine Coating:

    Order of 0.5nm Cr Grain Size

    Thin Film Deposition: 

    typically, 5nm

    Diameter Chamber:

    300mm

    Rotating Specimen Stage: 

    Adjustable for 6-to-8-inch Wafers

    Height spacing to target:

    60mm

    Vacuum Gauge- Atmos:

    1 x 10-5 mbar

    Deposition:

    0-450mA

    Deposition Rate:

    0-15nm/minute

    Sputter Timer:

    0-4 minutes

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    Electron beam evaporation system Pfeiffer Classic 500

    The Pfeiffer classic 500 is an e-beam evaporator with 4 pockets, each pocket can receive a different material and each material can be evaporated with its own process parameters (e-beam voltage, current intensity, sweep mode…)

    A total of four 6” wafers can be evaporated in each run. This tool is used to deposit metals such as Au, Cr, Ni, Ti, Ag, Al, Cu used for etching masks or any photonics application.

    Chamber size:

    500x560x575 mm

    Programmable deposition controller:

    1

    Quartz crystal thickness sensor:

    1

    Source shutter:

    1

    EMO protection and safety interlocks:

    Yes

    Base vacuum pressure:

    1.2×10·7 mbar

    High voltage:

    10 kV

    Max beam current:

    500 mA

    Pockets:

    4×8 cm3

    Evaporation materials:

    Au, Ag, Cr, Ti, Cu,
    Al, AICu, Ni, NiCr,
    Fe, GST(225 and 326)

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